New material could make it possible to pack more transistors on a chip. When electrons move in a phosphorus transistor, they do so only in 2D. Thus black phosphorus could help engineers surmount one of the big challenges for future electronics: designing energy-efficient transistors. “Transistors work more efficiently when they are thin, with electrons moving in only two dimensions,” says a/Prof Szkopek, “Nothing gets thinner than a single layer of atoms.”
In 2004, physicists at the University of Manchester first isolated and explored graphene and now there are other 2D materials like black phosphorus, a form of phosphorus similar to graphite and can be separated easily into single atomic layers, ie phosphorene. Unlike graphene, which acts like a metal, black phosphorus is a #natural #semiconductor: it can be readily switched on and off.
See the MBot Cube Desktop 3D Printer For the office, school and home.
Simple open design. Pick the body color that suits you.
Clean and waste-free building process.
Compact and portable – you can move it to the power supply without difficulty.
You can print from SD card, instead of PC.
“To lower the operating voltage of transistors, and thereby reduce the heat they generate, we have to get closer and closer to designing the transistor at the atomic level,” Szkopek says. “The toolbox of the future for transistor designers will require a variety of atomic-layered materials: an ideal semiconductor, an ideal metal, and an ideal dielectric. All 3 components must be optimized for a well designed transistor. Black phosphorus fills the semiconducting-material role.”
They observed the electrons under a magnetic field in experiments performed at the National High Magnetic Field Laboratory in Tallahassee, FL, the largest and highest-powered magnet laboratory in the world. This research “provides important insights into the fundamental physics that dictate the behavior of black phosphorus,”… “What’s surprising in these results is that the electrons are able to be pulled into a sheet of charge which is two-dimensional, even though they occupy a volume that is several atomic layers in thickness,”. This could potentially facilitate manufacturing the material – though at this point “no one knows how to manufacture this material on a large scale.” http://www.mcgill.ca/medicine/channels/news/could-black-phosphorus-be-next-silicon-253806
Structure of black phosphorus FETs/ field effect transistors characterization. (a) The bP crystal structure is composed of puckered honeycomb layers with an interlayer distance of 5.24 Å. (b) Three-dimensional schematic view of a bP FET with oxidized silicon back-gate and an encapsulating layer of MMA and PMMA. (c) Optical image of an encapsulated bP FET in Hall bar geometry. Scale bar, 10 μm. (d) AFM image of the same device with encapsulating layer removed. The bP thickness is 43±2 nm (82±4 atomic layers). Scale bar, 10 μm
Recent Comments