2D transistors tagged posts

Freestanding hafnium zirconium oxide membranes can enable advanced 2D transistors

A strategy to integrate hafnium zirconium oxide membranes into 2D transistors as high-k dielectrics
Fabrication and characterization of ferroelectric freestanding HZO membranes. Credit: Nature Electronics (2025). DOI: 10.1038/s41928-025-01398-y

To further reduce the size of electronic devices, while also improving their performance and energy efficiency, electronics engineers have been trying to identify alternative materials that outperform silicon and other conventional semiconductors. Two-dimensional (2D) semiconductors, materials that are just a few atoms thick and have a tunable electrical conductivity, are among the most promising candidates for the fabrication of smaller and better performing devices.

Past studies showed that these materials could be used to fabricate miniaturized transistors, electronic components that amplify or switch electrical signals, particularly f...

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