Cornell researchers have developed a new transistor architecture that could reshape how high-power wireless electronics are engineered, while also addressing supply chain vulnerabilities for a critical semiconductor material.
The device, called an XHEMT, includes an ultra-thin layer of gallium nitride built on bulk single-crystal aluminum nitride, a semiconductor material with low defect densities and an ultrawide bandgap—properties that allow it to withstand higher temperatures and voltages while reducing electrical losses.
The device was detailed in the journal Advanced Electronic Materials and the research was co-led by Huili Grace Xing, the William L...
Read More
Recent Comments