Antiferromagnetic tunneling junction tagged posts

Approaching the Terahertz Regime

(Left) A chaotic greyscale rectangle. (Right) Isometric view of colored layers sandwiched together.
Antiferromagnetic tunneling junction. High-resolution transmission electron microscopy image of the antiferromagnetic junction showing layers of different materials (left). Diagram showing the materials’ magnetic properties (right). ©2023 Nakatsuji et al. CC-BY

Room temperature quantum magnets switch states trillions of times per second. A class of nonvolatile memory devices, called MRAM, based on quantum magnetic materials, can offer a thousandfold performance beyond current state-of-the-art memory devices. The materials known as antiferromagnets were previously demonstrated to store stable memory states, but were difficult to read from. This new study paves an efficient way for reading the memory states, with the potential to do so incredibly quickly too.

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