bandgap tagged posts

Stretching Diamond for Next-generation Microelectronics

Stretching of microfabricated diamonds pave ways for applications in next-generation microelectronics.  (credit: Dang Chaoqun / City University of Hong Kong)

Diamond is the hardest material in nature. But out of many expectations, it also has great potential as an excellent electronic material. A joint research team led by City University of Hong Kong (CityU) has demonstrated for the first time the large, uniform tensile elastic straining of microfabricated diamond arrays through the nanomechanical approach. Their findings have shown the potential of strained diamonds as prime candidates for advanced functional devices in microelectronics, photonics, and quantum information technologies.

The research was co-led by Dr Lu Yang, Associate Professor in the Department of Mechanical Engi...

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Paper-Thin Gallium Oxide Transistor handles more than 8,000 Volts

The graph image on the left shows the breakdown voltage of three different versions of the gallium oxide transistor. The illustration on the right shows the configuration and materials that make up the transistor that achieved a breakdown voltage of more than 8,000 volts. Credit: University at Buffalo

People love their electric cars. But not so much the bulky batteries and related power systems that take up precious cargo space. Help could be on the way from a gallium oxide-based transistor under development at the University at Buffalo.

In a study published in the June edition of IEEE Electron Device Letters, electrical engineers describe how the tiny electronic switch can handle more than 8,000 volts, an impressive feat considering it’s about as thin as a sheet of paper.

The tr...

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‘Legos’ for Fabrication of Atomically Precise Electronic Circuits

Bottom-up synthesis of 7–13 GNR heterojunctions.

a, Synthesis of 7–13 GNR heterojunctions from molecular building blocks 1 and 2. Building blocks 1 and 2 are co-deposited onto a pristine Au(111) surface held at room temperature. Stepwise heating induces cleavage of the labile C–Br bonds, colligation (at 470 K) and then cyclization/dehydrogenation (at 670 K), resulting in 7–13 GNR heterojunctions. b, High-resolution STM topograph of a 7–13 GNR heterojunction (sample voltage Vs = 60 mV, tunnelling current It = 200 pA). Inset: Larger-scale STM image of multiple GNR heterojunctions, showing a variety of segment lengths (Vs = 0.50 V, It = 2 pA).

For the 1st time, researchers tailored the electronic properties of nanoribbons using a new “bottom-up” method that precisely controls and modulates the atomic-scal...

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