beta-Ga2O3-MOSFETs tagged posts

Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.

Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applic...