bismuth-selenide-based topological insulator tagged posts

New Material could Improve Efficiency of Computer Processing and Memory

This cross-sectional transmission electron microscope image shows a sample used for the charge-to-spin conversion experiment. The nano-sized grains of less than 6 nanometers in the sputtered topological insulator layer created new physical properties for the material that changed the behavior of the electrons in the material.
Credit: Wang Group, University of Minnesota

Discovery could have major impact on semiconductor industry...

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