Chip-Scale Broadband Light Source tagged posts

A Chip-Scale Broadband Light Source in Silicon Carbide

(a) Schematic top view (left) and cross section (right) of the 4H-silicon-carbide-on-insulator platform for frequency comb generation based on compact microring resonators. The sidewall angle (θ) is estimated near 80–85 deg in our nanofabrication. Dispersion engineering is carried out by varying the ring waveguide width (RW). In addition, efficient coupling is realized using the pulley structure where the access waveguide width and coupling length are adjusted to achieve phase matching to the desired resonant mode families. (b) Scanning electron micrograph of a 36-μm-radius SiC microring. In this work, the SiC thickness is fixed at 500 nm with a pedestal layer of 50 nm. (c) Simulated integrated dispersion [Dint; see its definition in Eq. (1)] for the fundamental transverse-electric (i.e...
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