computer memory tagged posts

A new class of magnetism called altermagnetism has been imaged for the first time in a new study. The findings could lead to the development of new magnetic memory devices with the potential to increase operation speeds of up to a thousand times.

Altermagnetism is a distinct form of magnetic order where the tiny constituent magnetic building blocks align antiparallel to their neighbors but the structure hosting each one is rotated compared to its neighbors.

Scientists from the University of Nottingham’s School of Physics and Astronomy have shown that this new third class of magnetism exists and can be controlled in microscopic devices. The findings have been published in Nature.

Professor Peter Wadley, who led the research, explains, “Altermagnets consist of magnetic moments ...

Scientists led by Nanyang Technological University, Singapore (NTU Singapore) investigators have made a significant advance in developing alternative materials for the high-speed memory chips that let computers access information quickly and that bypass the limitations of existing materials.

They have discovered a way that allows them to make sense of previously hard-to-read data stored in these alternative materials, known as antifer...

A team of researchers has discovered unexpectedly familiar behavior in the antiferroelectric material known as zirconium dioxide, or zirconia. In the last few years, a class of materials called antiferroelectrics has been increasingly studied for its potential applications in modern computer memory devices. Research has shown that antiferroelectric-based memories might have greater energy efficiency and faster read and write speeds than conventional memories, among other appealing attributes. Further, the same compounds that can exhibit antiferroelectric behavior are already integrated into existing semiconductor chip manufacturing processes.

Now, a team led by ...