computer memory tagged posts

Scientists led by Nanyang Technological University, Singapore (NTU Singapore) investigators have made a significant advance in developing alternative materials for the high-speed memory chips that let computers access information quickly and that bypass the limitations of existing materials.

They have discovered a way that allows them to make sense of previously hard-to-read data stored in these alternative materials, known as antifer...

A team of researchers has discovered unexpectedly familiar behavior in the antiferroelectric material known as zirconium dioxide, or zirconia. In the last few years, a class of materials called antiferroelectrics has been increasingly studied for its potential applications in modern computer memory devices. Research has shown that antiferroelectric-based memories might have greater energy efficiency and faster read and write speeds than conventional memories, among other appealing attributes. Further, the same compounds that can exhibit antiferroelectric behavior are already integrated into existing semiconductor chip manufacturing processes.

Now, a team led by ...

This brings skyrmions a step closer to use in real-world data storage as well as other novel magnetic and electronic technologies, ie the basis for a new type of computer memory that never loses its grip on the data it stores. Until just recently, magnetic skyrmions had only been seen at very low temperatures and under powerful magnetic fields.

The magnetic force in each individual atom in a magnet ie “magnetic moments” all line up the same way. But under extreme conditions, certain magnetic materials (such as MnSi or FeCoSi) can, instead, develop spots where the moments curve and twist, forming a winding, ring-like configuration...