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    Engineers develop thin film to make AI chips faster and more energy efficient

    December 4, 2025, Categories  Physics, Technology/Electronics

    UH engineers making AI faster, reducing power consumption
    This is the two-dimensional thin film electric insulator designed in the University of Houston lab of Alamgir Karim to make AI faster and reduce power consumption. Credit: University of Houston

    Addressing the staggering power and energy demands of artificial intelligence, engineers at the University of Houston have developed a revolutionary new thin-film material that promises to make AI devices significantly faster while dramatically cutting energy consumption.

    The breakthrough, detailed in the journal ACS Nano, introduces a specialized two-dimensional (2D) thin film dielectric—or an electric insulator—designed to replace traditional, heat generating components in integrated circuit chips...

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    New Quantum Materials could take Computing Devices beyond the Semiconductor Era

    December 4, 2018, Categories  Chemistry/Nanotechnology, Physics, Technology/Electronics

    Single crystals of the multiferroic material bismuth-iron-oxide. The bismuth atoms (blue) form a cubic lattice with oxygen atoms (yellow) at each face of the cube and an iron atom (gray) near the center. The somewhat off-center iron interacts with the oxygen to form an electric dipole (P), which is coupled to the magnetic spins of the atoms (M) so that flipping the dipole with an electric field (E) also flips the magnetic moment. The collective magnetic spins of the atoms in the material encode the binary bits 0 and 1, and allow for information storage and logic operations. Credit: Ramamoorthy Ramesh lab, UC Berkeley

    Single crystals of the multiferroic material bismuth-iron-oxide. The bismuth atoms (blue) form a cubic lattice with oxygen atoms (yellow) at each face of the cube and an iron atom (gray) near the center. The somewhat off-center iron interacts with the oxygen to form an electric dipole (P), which is coupled to the magnetic spins of the atoms (M) so that flipping the dipole with an electric field (E) also flips the magnetic moment. The collective magnetic spins of the atoms in the material encode the binary bits 0 and 1, and allow for information storage and logic operations.
    Credit: Ramamoorthy Ramesh lab, UC Berkeley

    Multiferroics are promising candidates for new type of memory and logic circuits. Researchers from Intel Corp...

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