Opening the path to next-generation semiconductors through epitaxial growth of new Van der Waals materials. A research team led by Director JO Moon-Ho of the Center for Van der Waals Quantum Solids within the Institute for Basic Science (IBS) has implemented a novel method to achieve epitaxial growth of 1D metallic materials with a width of less than 1 nm. The group applied this process to develop a new structure for 2D semiconductor logic circuits. Notably, they used the 1D metals as a gate electrode of the ultra-miniaturized transistor.
Integrated devices based on two-dimensional (2D) semiconductors, which exhibit excellent properties even at the ultimate limit of material thickness down to the atomic scale, are a major focus of basic and applied research worldwide.
However, r...
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