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    hexagonal boron nitride (h-BN) tagged posts

    Ultra-Clean Fabrication platform produces nearly ideal 2D Transistors

    May 19, 2019, Categories  Physics, Technology/Electronics

    An enhanced optical microscope image of a Hall-bar structure used to characterize transistor properties for devices made with ultraclean transferred contacts. The long radial lines, made from deposited gold, connect the small contacts at the center of the device to large probe pads for easy measurements.

    Columbia Engineering researchers report that they have demonstrated a nearly ideal transistor made from a 2D material stack – with only a two-atom-thick semiconducting layer – by developing a completely clean and damage-free fabrication process. Their method shows vastly improved performance compared to 2D semiconductors fabricated with a conventional process, and could provide a scalable platform for creating ultra-clean devices in the future.

    Researchers at Columbia Engineering repo...

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    Scientists Synthesize Hexagonal Boron Nitride

    October 28, 2015, Categories  Chemistry/Nanotechnology, Physics, Technology/Electronics

    Synthesis of multilayer h-BN film.

    (a) Schematic diagram of the chemical vapour deposition approach for h-BN synthesis. Borazine is used as a precursor. A multilayer h-BN film is grown on a Fe foil in a quarts tube. (b,c) Photographs of as-grown h-BN film on a Fe foil and the transferred h-BN film onto a SiO2/Si substrate. (d,e) SEM images of an h-BN film on a Fe foil. (f) Cathodoluminescence spectra of multilayer h-BN film. (g) Optical image of multilayer h-BN film. (h) Raman mapping image of the E2g peak near 1,366 cm−1 corresponding to the area of g. (i) Raman spectra of each spot for the corresponding blue triangle, red circle and black square in h. (j) X-ray diffraction pattern of multilayer h-BN film on a SiO2/Si substrate. (k) Contact angles of bare Fe (top) and as-grown h-BN on a Fe foil (bottom)...

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