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Part of the process of creating ferroelectric magnesium-substituted zinc oxide thin films include: (left) Image showing thin film being sputter-deposited from metal sources; (center) ferroelectric hysteresis loops of thin-film capacitors showing two remanent polarization states at zero field; (right) atomic force microscope image showing a smooth surface at the nanometer scale and a very fine-grained and fiber-textured microstructure. IMAGE: PENN STATE MATERIALS RESEARCH INSTITUTE
A new family of materials that could result in improved digital information storage and uses less energy may be possible thanks to a team of Penn State researchers who demonstrated ferroelectricity in magnesium-substituted zinc oxide.
Ferroelectric materials are spontaneous electricly polarized bcause nega...
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