MELRAM cell and the electric scheme for the magnetic state identification.
A team from France and Russia has now developed a magnetoelectric random access memory (MELRAM) cell that has the potential to increase power efficiency, and decrease heat waste, by orders of magnitude for read operations at room temperature. The research could aid production of devices such as instant-on laptops, close-to-0-consumption flash drives, and data storage centers that require much less air conditioning.
Billions of transistors can now be etched onto single chips in a space the size of a dime, but at some point, increasing this number for even better performance using the same space will not be possible...
Read More
Recent Comments