A research group at Tohoku University’s WPI-AIMR has succeeded in finding the origin and the mechanism of ferromagnetism in Mn-doped GaAs. The discovery is significant as it will accelerate the development of the spintronic element. GaAs, like silicon, is a well-known semiconductor commonly used in high-speed electronic devices and laser diodes.
When manganese (Mn) atoms are doped into a GaAs crystal ((Ga,Mn)As), the crystal exhibits characteristics and properties of both the semiconductor and magnet...
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