MoS2 tagged posts

Integrated Circuits based on a 2D Semiconductor Operating at GHz Frequencies

Integrated circuits based on a 2D semiconductor operating at GHz frequencies
High-performance MoS2 ring oscillator based on air-gap device structures. Credit: Fan et al

Transistors are crucial electronic components that regulate, amplify and control the flow of current inside most existing devices. In recent years, electronics engineers have been trying to identify materials and design strategies that could help to further improve the performance of transistors, while also reducing their size.

Two-dimensional (2D) transition metal dichalcogenides have some advantageous properties that could help to enhance the capabilities of transistors. While past studies have demonstrated the potential of these materials in individual transistors, their use for developing entire integrated circuits (ICs) that operate at high frequencies has proved challenging.

Researc...

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6G Component provides Speed, Efficiency needed for Next-Gen Network

Even though consumers won’t see it for years, researchers around the world are already laying the foundation for the next generation of wireless communications, 6G. An international team led by researchers at The University of Texas at Austin has developed components that will allow future devices to achieve increased speeds necessary for such a technological jump.

In a new paper published in Nature Electronics, the researchers demonstrated new radio frequency switches that are responsible for keeping devices connected by jumping between networks and frequencies while receiving data...

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Scientists unravel new Insights into Promising Semiconductor material

Various configurations of oxygen adsorption with corresponding energies. (a) Sulphur, molybdenum, and oxygen are represented by yellow, blue, and red spheres, respectively. The sulphur vacancy site is represented by the cross. (b) Nudged elastic band calculation of the energy barrier for migration of an oxygen molecule towards a sulphur vacancy and respective trapping. The energy barrier, measured from the starting point, is 56 meV. The calculation was performed in the spin-averaged state. (c) Calculated ionization levels for relevant defects (all energies are in eV). VBM and CBM refer to the valence band maximum and conduction band minima, respectively. (d) Representation of the charge density of the trapped electrons at sulfur vacancies.

Various configurations of oxygen adsorption with corresponding energies. (a) Sulphur, molybdenum, and oxygen are represented by yellow, blue, and red spheres, respectively. The sulphur vacancy site is represented by the cross. (b) Nudged elastic band calculation of the energy barrier for migration of an oxygen molecule towards a sulphur vacancy and respective trapping. The energy barrier, measured from the starting point, is 56 meV. The calculation was performed in the spin-averaged state. (c) Calculated ionization levels for relevant defects (all energies are in eV). VBM and CBM refer to the valence band maximum and conduction band minima, respectively. (d) Representation of the charge density of the trapped electrons at sulfur vacancies.

National University of Singapore (NUS) researchers...

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Explaining how 2D Materials Break at the Atomic level

 Schematic representation of the crack propagation in 2D MoS2 at the atomic level. Dislocations shown with red and purple dots are visible at the crack tip zone. Internal tensile stresses are represented by red arrows.

Schematic representation of the crack propagation in 2D MoS2 at the atomic level. Dislocations shown with red and purple dots are visible at the crack tip zone. Internal tensile stresses are represented by red arrows.

Cracks sank the ‘unsinkable’ Titanic; decrease the performance of touchscreens and erode teeth. We are familiar with cracks in 3D objects, but how do thin 2D materials crack? 2D materials, like molybdenum disulfide (MoS2), have emerged as an important asset for future electronic and photoelectric devices. However, the mechanical properties of 2D materials are expected to differ greatly from 3D materials...

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