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Caption: Schematic showing the crystal structure of the boron nitride key to a new ferroelectric material that MIT researchers and colleagues have used to build a transistor with superlative properties. The schematic shows how the structure can change as two ultrathin layers of boron nitride slide past each other upon application of an electric field. The P stands for polarization, or negative/positive charge. Credit: Ashoori and Jarillo-Herrero labs
In 2021, a team led by MIT physicists reported creating a new ultrathin ferroelectric material, or one where positive and negative charges separate into different layers. At the time, they noted the material’s potential for applications in computer memory and much more...
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