next-gen semiconductor devices tagged posts

Schematic of the epitaxial growth procedure of ZnSe/GaAs heterostructure growth using either light-start or dark-start growth procedures. (a) Prior to ZnSe epilayer growth, the GaAs epilayer was grown in a dedicated III-V MBE chamber and was covered with an amorphous arsenic film prior to transferring it to a dedicated II-VI chamber. (b) The amorphous arsenic film was then thermally desorbed and the interface growth was initiated with a Zn pre-treatment under either a light-start or dark-start condition. During light-start sample growth, UV light was directed onto the growth surface from the beginning of Zn pre-treatment until the end of the ZnSe growth (f–h). During dark-start sample growth, UV light was directed onto the growth surface only during ZnSe epilayer growth (c–e).