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    Paper-Thin Gallium Oxide Transistor handles more than 8,000 Volts

    June 1, 2020, Categories  Physics, Technology/Electronics

    The graph image on the left shows the breakdown voltage of three different versions of the gallium oxide transistor. The illustration on the right shows the configuration and materials that make up the transistor that achieved a breakdown voltage of more than 8,000 volts. Credit: University at Buffalo

    People love their electric cars. But not so much the bulky batteries and related power systems that take up precious cargo space. Help could be on the way from a gallium oxide-based transistor under development at the University at Buffalo.

    In a study published in the June edition of IEEE Electron Device Letters, electrical engineers describe how the tiny electronic switch can handle more than 8,000 volts, an impressive feat considering it’s about as thin as a sheet of paper.

    The tr...

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