RAM tagged posts

Scientists Discover Novel Way of Reading Data in Antiferromagnets, Unlocking their use as Computer Memory

A microscopic image of the tiny device containing antiferromagnetic manganese bismuth telluride (green) that the Nanyang Technological University, Singapore researchers did their experiments on. The lines (light yellow) radiating from the centre are electrodes from which current was passed through the manganese bismuth telluride. (Image: NTU Singapore)

Scientists led by Nanyang Technological University, Singapore (NTU Singapore) investigators have made a significant advance in developing alternative materials for the high-speed memory chips that let computers access information quickly and that bypass the limitations of existing materials.

They have discovered a way that allows them to make sense of previously hard-to-read data stored in these alternative materials, known as antifer...

Read More