Room Temperature Field-Effect Transistor tagged posts

André Dankert, Saroj P. Dash. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nature Communications, 2017; 8: 16093 DOI: 10.1038/NCOMMS16093

Graphene Flagship researchers at Chalmers University of Technology in Gothenburg, Sweden have showed a graphene-based spin field-effect transistor operating at room temperature. Using the spin of the electrons in graphene and other layered material heterostructures they have produced working devices as a step towards integrating spintronic logic and memory devices. Current semiconductor logic devices within our computers use the flow and control of electronic charge for information processing. Spintronic memory devices use electron spin to store information...