MIT researchers have devised a way to grow single crystal GaN thin film on a GaN substrate through two-dimensional materials. The GaN thin film is then exfoliated by a flexible substrate, showing the rainbow color that comes from thin film interference. This technology will pave the way to flexible electronics and the reuse of the wafers.
Credit: Wei Kong and Kuan Qiao; Creative Commons Attribution Non-Commercial No Derivatives license
Cost-effective method produces semiconducting films from materials that outperform silicon. MIT engineers have developed a technique to fabricate ultrathin semiconducting films made from a host of exotic materials other than silicon...
Read More
Recent Comments