The proposed combination of materials serves as a memory unit by supporting read and write operations. The spin injection by the topological insulator (TI) material reverses the magnetization of the ferromagnetic (FM) material, representing the “write” operation. Furthermore, the spin injection can also change the overall resistance of the materials, which can be sensed through an external circuit, representing the “read” operation.
Scientists at Tokyo Institute of Technology (Tokyo Tech) explore a new material combination that sets the stage for magnetic random access memories, which rely on spin – an intrinsic property of electrons – and could outperform current storage devices...
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