spintronics tagged posts

Spintronics: Controlling Magnetic Spin with Electric Fields

Hugo Dil and Juraj Krempasky with the experimental set-up at the Paul Scherrer Institut. Credit: Hugo Dil/EPFL

Hugo Dil and Juraj Krempasky with the experimental set-up at the Paul Scherrer Institut. Credit: Hugo Dil/EPFL

Physicists have found a way to reverse electron spins using electric fields for the first time, paving the way for programmable spintronics technologies. Spintronics is a field of physics that studies the spin of electrons, an intrinsic type of magnetism that many elementary particles have. The field of spintronics has given rise to technological concepts of “spintronic devices,” which would run on electron spins, rather than their charge, used by traditional electronics.

In order to build programmable spintronic devices we first need to be able to manipulate spins in certain materials...

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Breakthrough in Spintronics

1, Bismuthene film interrupted at a step in the silicon carbide substrate viewed through a scanning tunnelling microscope. The film areas inevitably end at the substrate step and a conducting edge channel (white) occurs. 2. Schematic illustration of the conducting edge channels at the boundaries of the bismuthene film. The edge channels protect the spins against scattering and thereby allow loss-free and efficient spin-based data transmission.

1, Bismuthene film interrupted at a step in the silicon carbide substrate viewed through a scanning tunnelling microscope. The film areas inevitably end at the substrate step and a conducting edge channel (white) occurs.
2. Schematic illustration of the conducting edge channels at the boundaries of the bismuthene film. The edge channels protect the spins against scattering and thereby allow loss-free and efficient spin-based data transmission.

It’s ultra-thin, electrically conducting at the edge due to quantum effects and insulating within – and all that at room temperature: Physicists from the University of Würzburg have developed a promising new material. The material class of topological insulators is presently the focus of international solids research...

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Spinning around: A Room Temperature Field-Effect Transistor using Graphene’s Electron Spin

André Dankert, Saroj P. Dash. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nature Communications, 2017; 8: 16093 DOI: 10.1038/NCOMMS16093

André Dankert, Saroj P. Dash. Electrical gate control of spin current in van der Waals heterostructures at room temperature. Nature Communications, 2017; 8: 16093 DOI: 10.1038/NCOMMS16093

Graphene Flagship researchers at Chalmers University of Technology in Gothenburg, Sweden have showed a graphene-based spin field-effect transistor operating at room temperature. Using the spin of the electrons in graphene and other layered material heterostructures they have produced working devices as a step towards integrating spintronic logic and memory devices. Current semiconductor logic devices within our computers use the flow and control of electronic charge for information processing. Spintronic memory devices use electron spin to store information...

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Magnetoelectric Memory Cell increases Energy Efficiency for Data Storage

Magnetoelectric Memory Cell increases Energy Efficiency for Data Storage

MELRAM cell and the electric scheme for the magnetic state identification.

A team from France and Russia has now developed a magnetoelectric random access memory (MELRAM) cell that has the potential to increase power efficiency, and decrease heat waste, by orders of magnitude for read operations at room temperature. The research could aid production of devices such as instant-on laptops, close-to-0-consumption flash drives, and data storage centers that require much less air conditioning.

Billions of transistors can now be etched onto single chips in a space the size of a dime, but at some point, increasing this number for even better performance using the same space will not be possible...

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