tantalum oxide tagged posts

Computer memory could one day withstand the blazing temperatures in fusion reactors, jet engines, geothermal wells and sweltering planets using a new solid-state memory device developed by a team of engineers led by the University of Michigan.

Unlike conventional silicon-based memory, the new device can store and rewrite information at temperatures over 1,100°F (600°C)—hotter than the surface of Venus and the melting temperature of lead. It was developed in collaboration with researchers at Sandia National Laboratory.

“It could enable electronic devices that didn’t exist for high-tempera...

A schematic shows the layered structure of tantalum oxide, multilayer graphene and platinum used for a new type of memory developed at Rice University. The memory device overcomes crosstalk problems that cause read errors in other devices. Credit: Tour Group/Rice University

The memories are based on tantalum oxide, a common insulator in electronics. Applying voltage to a 250-nm-thick sandwich of graphene, tantalum, nanoporous tantalum oxide and platinum creates addressable bits where the layers meet. Control voltages that shift oxygen ions and vacancies switch the bits between ones and zeroes.

The discovery by Rice lab chemist James Tour could allow for crossbar array memories that store up to 162 gigabits, much higher than other oxide-based memory systems...