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    UV light tagged posts

    Changing the Color of 3D printed objects

    January 31, 2018, Categories  Chemistry/Nanotechnology, Technology/Electronics

    This is MIT professor Stefanie Mueller, pictured in her lab. Credit: Jason Dorfman, MIT CSAIL

    This is MIT professor Stefanie Mueller, pictured in her lab. Credit: Jason Dorfman, MIT CSAIL

    3D printing has come a long way since the first “rapid prototyping” patent was rejected in 1980. Still, there’s a big issue: once objects are printed, they’re final. But imagine if, for example, you could recolor your iPhone case or earrings to match whatever outfit you’re wearing. Researchers from MIT’s Computer Science and Artificial Intelligence Laboratory (CSAIL) have gotten closer to making that a reality. In a new paper, they present “ColorFab,” a method for repeatedly changing the colors of 3D printed objects after fabrication.

    Using their own 3D printable ink that changes color when exposed to UV light, the team can recolor a multi-colored object in just over 20 minutes – and they say they...

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    Researchers validate UV light’s use in improving Semiconductors

    August 30, 2017, Categories  Chemistry/Nanotechnology, Physics, Technology/Electronics

    Schematic of the epitaxial growth procedure of ZnSe/GaAs heterostructure growth using either light-start or dark-start growth procedures. (a) Prior to ZnSe epilayer growth, the GaAs epilayer was grown in a dedicated III-V MBE chamber and was covered with an amorphous arsenic film prior to transferring it to a dedicated II-VI chamber. (b) The amorphous arsenic film was then thermally desorbed and the interface growth was initiated with a Zn pre-treatment under either a light-start or dark-start condition. During light-start sample growth, UV light was directed onto the growth surface from the beginning of Zn pre-treatment until the end of the ZnSe growth (f–h). During dark-start sample growth, UV light was directed onto the growth surface only during ZnSe epilayer growth (c–e).

    Schematic of the epitaxial growth procedure of ZnSe/GaAs heterostructure growth using either light-start or dark-start growth procedures. (a) Prior to ZnSe epilayer growth, the GaAs epilayer was grown in a dedicated III-V MBE chamber and was covered with an amorphous arsenic film prior to transferring it to a dedicated II-VI chamber. (b) The amorphous arsenic film was then thermally desorbed and the interface growth was initiated with a Zn pre-treatment under either a light-start or dark-start condition. During light-start sample growth, UV light was directed onto the growth surface from the beginning of Zn pre-treatment until the end of the ZnSe growth (f–h). During dark-start sample growth, UV light was directed onto the growth surface only during ZnSe epilayer growth (c–e).

    A discov...

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