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    ‘wide-bandgap’ semiconductor tagged posts

    Graphene key to growing 2D Semiconductor with extraordinary properties

    August 29, 2016, Categories  Physics, Technology/Electronics

    Graphene key to growing 2-dimensional semiconductor with extraordinary properties

    An illustration of the Migration Enhance Encapsulated Growth (MEEG) process to stabilize novel wide-bandgap two-dimensional nitride semiconductors that are not naturally occurring. MEEG is facilitated by defects in the graphene lattice that act as pathways for intercalation. When the gallium and nitrogen adatoms meet at the graphene/SiC interface, they chemically react to form two-dimensional gallium nitride. Credit: Z. Al Balushi and Stephen Weitzner, Penn State MatSE

    A newly discovered method for making two-dimensional materials could lead to new and extraordinary properties, particularly in nitrides, say the Penn State materials scientists who discovered the process...

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    New Thin Film Transistor may lead to Flexible Devices

    February 10, 2016, Categories  Physics, Technology/Electronics

    UAlberta electrical engineering PhD student Gem Shoute (second from right) is the lead author on a research paper demonstrating a powerful new flexible transistor. The team: electrical engineering professor Doug Barlage, Triranta Muneshwar, Shoute and materials engineering professor Ken Cadien, published its work in Nature Communications. Credit: Image courtesy of University of Alberta

    UAlberta electrical engineering PhD student Gem Shoute (second from right) is the lead author on a research paper demonstrating a powerful new flexible transistor. The team: electrical engineering professor Doug Barlage, Triranta Muneshwar, Shoute and materials engineering professor Ken Cadien, published its work in Nature Communications. Credit: Image courtesy of University of Alberta

    Engineering first with applications in displays to medical imaging and renewable energy production.The transistor is easily scaled and has power-handling capabilities at least 10X greater than commercially produced thin film transistors...

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