Schematic of a transistor with a molybdenum disulfide channel and 1-nanometer carbon nanotube gate. Credit: Sujay Desai/UC Berkeley
Research breaks major barrier in transistor size by creating gate only 1nm long. For more than a decade, engineers have been eyeing the finish line in the race to shrink the size of components in integrated circuits. They knew that the laws of physics had set a 5nm threshold on the size of transistor gates among conventional semiconductors, about 1/4 the size of high-end 20nm-gate transistors now on the market.
“We made the smallest transistor reported to date,” said Javey, lead principal investigator of the Electronic Materials program in Berkeley Lab’s Materials Science Division. “The gate length is considered a defining dimension of the transistor...
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