Energy-efficient power electronics tagged posts

A National Institute for Materials Science (NIMS) research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh environment applications, as well as the development of diamond power electronics. The research is published in Advanced Science.

Semiconductor diamond has outstanding physical properties such as ultra wide-bandgap energy of 5...

Engineers have now achieved a breakthrough with transistors based on gallium oxide (beta-Ga2O3). The newly developed beta-Ga2O3-MOSFETs (metal-oxide-semiconductor field-effect transistor) provide a high breakdown voltage combined with high current conductivity. With a breakdown voltage of 1.8 kilovolts and a record power figure of merit of 155 megawatts per square centimeter, they achieve unique performance figures close to the theoretical material limit of gallium oxide.

Powerful electronic components are indispensable for future communications, for the digital transformation of society and for artificial intelligence applic...