integrated circuits tagged posts

A National Institute for Materials Science (NIMS) research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh environment applications, as well as the development of diamond power electronics. The research is published in Advanced Science.

Semiconductor diamond has outstanding physical properties such as ultra wide-bandgap energy of 5...

Transistors are crucial electronic components that regulate, amplify and control the flow of current inside most existing devices. In recent years, electronics engineers have been trying to identify materials and design strategies that could help to further improve the performance of transistors, while also reducing their size.

Two-dimensional (2D) transition metal dichalcogenides have some advantageous properties that could help to enhance the capabilities of transistors. While past studies have demonstrated the potential of these materials in individual transistors, their use for developing entire integrated circuits (ICs) that operate at high frequencies has proved challenging.

Researc...

This was first deemed impossible. Apps include: novel, energy-efficient electronic devices, particularly integrated circuits. A spin wave is caused by a perturbation of local magnetisation direction in a magnetic material. Such a perturbation is caused by an electron with an opposite spin, relative to the magnetisation. Spin waves transmit these perturbations in the material. This research demonstrates for the first time that it is possible to transmit electric signals in an insulating material.

So far, electrical circuits based on spin waves have not been realised, since it turned out to be impossible to introduce a perturbation in the system large enough to create spin waves...