Rows of photovoltaic cells are shown atop a building on the Georgia Institute of Technology campus in Atlanta.
Credit: John Toon, Georgia Tech
A team of semiconductor researchers based in France has used a boron nitride separation layer to grow indium gallium nitride (InGaN) solar cells that were then lifted off their original sapphire substrate and placed onto a glass substrate.
By combining the InGaN cells with photovoltaic (PV) cells made from materials such as silicon or gallium arsenide, the new lift-off technique could facilitate fabrication of higher efficiency hybrid PV devices able to capture a broader spectrum of light. Such hybrid structures could theoretically boost solar cell efficiency as high as 30% for an InGaN/Si tandem device.
The technique is the third major application f...
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