Image courtesy ACS Nano
University of Illinois electrical engineers have cleared another hurdle in high-power semiconductor fabrication by adding the field’s hottest material – beta-gallium oxide – to their arsenal. Beta-gallium oxide is readily available and promises to convert power faster and more efficiently than today’s leading semiconductor materials – gallium nitride and silicon, the researchers said. Their findings are published in the journal ACS Nano.
Flat transistors have become about as small as is physically possible, but researchers addressed this problem by going vertical...
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