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    Amorphous Boron Nitride shows excellent Insulating Properties for Next Generation of Electronics

    June 26, 2020, Categories  Chemistry/Nanotechnology

    a) Remote ICP-CVD system with borazine mass flow controller (MFC) for precise control of borazine flow. The a-BN films were grown on Si substrates at 400 °C. Credit: UNIST, SAIT, University of Cambridge, Catalan Institute of Nanoscience and Nanotechnology
    b) Side view of images of a -BN sample grown on a Si substrate at T= 673K. Atomic species are shown in different colours: Si (yellow), Blue (N), Pink 3 (B). Credit: UNIST, SAIT, University of Cambridge, Catalan Institute of Nanoscience and Nanotechnology

    In the ongoing process of miniaturization of logic and memory devices in electronic circuits, reducing the dimensions of interconnects—metal wires that link different components on a chip—is crucial to guarantee fast response of the device and improve its performance...

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