Emerging fluctuation-based functionalities are expected to open a way to novel memory device technology. An international joint research team led by NIMS succeeded in fabricating a neuromorphic network composed of numerous metallic nanowires. Using this network, the team was able to generate electrical characteristics similar to those associated with higher order brain functions unique to humans, such as memorization, learning, forgetting, becoming alert and returning to calm. The team then clarified the mechanisms that induced these electrical characteristics.
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