An experimental transistor using silicon oxide for the base, carbide for the 2D material and aluminum oxide for the encapsulating material
Credit: Zahra Hemmat
Sandwiching 2D materials used in nanoelectronic devices between their 3D silicon bases and an ultrathin layer of aluminum oxide can significantly reduce the risk of component failure due to overheating, according to a new study published in the journal of Advanced Materials led by researchers at the University of Illinois at Chicago College of Engineering.
Many of today’s silicon-based electronic components contain 2D materials such as graphene...
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