Most electronic memory storage devices require the ability to trap large numbers of electrons for each bit of memory. In an ideal world, however, it would take only one electron. This would reduce space requirements and power consumption for devices. Now, a team in China has realized this goal with an ultrathin device capable of minimizing the stray capacitance that plagued earlier attempts. The new study, published in Science, describes how this novel device has overcome challenges in implementing the single-electron design.
The capacitance problem
In theory, each time an electron is added or removed, it should create a distinct, step-like change in a transistor’s switching volt...
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