transistors tagged posts

New Quantum Nanodevice can simultaneously act as a Heat Engine and a Refrigerator

image of an engine and a refrigerator
 RIKEN researchers have produced a quantum nanodevice that can behave both as an engine and a refrigerator—at the same time. Left: © Martin Steinthaler/Getty; Right: © lilographik/Getty

A multitasking nanomachine that can act as a heat engine and a refrigerator at the same time has been created by RIKEN engineers. The device is one of the first to test how quantum effects, which govern the behavior of particles on the smallest scale, might one day be exploited to enhance the performance of nanotechnologies.

Conventional heat engines and refrigerators work by connecting two pools of fluid. Compressing one pool causes its fluid to heat up, while rapidly expanding the other pool cools its fluid...

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Faster, Smaller, more Powerful Computer Chips: Hafnia dons a new face

The authors observed in real-time the transformation of a HfO2 nanorod from its room temperature to tetragonal phase, at 1000° less than its bulk temperature. Nanorod surfaces and twin boundary defects (pictured here) serve to kinetically trap this phase.

The authors observed in real-time the transformation of a HfO2 nanorod from its room temperature to tetragonal phase, at 1000° less than its bulk temperature. Nanorod surfaces and twin boundary defects (pictured here) serve to kinetically trap this phase.

Materials research creates potential for improved computer chips and transistors. The inorganic compound hafnium dioxide commonly used in optical coatings has several polymorphs, including a tetragonal form with highly attractive properties for computer chips and other optical elements. However, because this form is stable only at temperatures above 3100F – scientists have had to make do with its more limited monoclinic polymorph. Until now...

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Replacement for Silicon Devices Looms Big with new Discovery

This diagram illustrates the effect of helium ions on the mechanical and electrical properties of the layered ferroelectric: a.) Disappearance domains in the exposed area; as the mound forms yellow regions (ferroelectricity) gradually disappear; b.) Mechanical properties of the material; warmer colors indicate hard areas, cool colors indicate soft areas; c.) Conductivity enhancement; warmer colors show insulating areas, cooler colors show more conductive areas. Credit: ORNL

This diagram illustrates the effect of helium ions on the mechanical and electrical properties of the layered ferroelectric: a.) Disappearance domains in the exposed area; as the mound forms yellow regions (ferroelectricity) gradually disappear; b.) Mechanical properties of the material; warmer colors indicate hard areas, cool colors indicate soft areas; c.) Conductivity enhancement; warmer colors show insulating areas, cooler colors show more conductive areas. Credit: ORNL

2D electronic devices could inch closer to their ultimate promise of low power, high efficiency and mechanical flexibility with a processing technique developed at the Department of Energy’s Oak Ridge National Laboratory...

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New 2D Semiconducting Material could lead to much Faster , Efficient, Computers and Smartphones

University of Utah materials science and engineering associate professor Ashutosh Tiwari holds up a substrate layered with a newly discovered 2-D material made of tin and oxygen. Tiwari and his team have discovered this new material, tin monoxide, which allows electrical charges to move through it much faster than common 3-D material such as silicon. This breakthrough in semiconductor material could lead to much faster computers and mobile devices such as smartphones that also run on less power and with less heat. Credit: Dan Hixson/University of Utah College of Engineering

University of Utah materials science and engineering associate professor Ashutosh Tiwari holds up a substrate layered with a newly discovered 2-D material made of tin and oxygen. Tiwari and his team have discovered this new material, tin monoxide, which allows electrical charges to move through it much faster than common 3-D material such as silicon. This breakthrough in semiconductor material could lead to much faster computers and mobile devices such as smartphones that also run on less power and with less heat. Credit: Dan Hixson/University of Utah College of Engineering

The semiconductor, made of tin monoxide (SnO), is a layer of 2D material only 1 atom thick, allowing electrical charges to move through it much faster than conventional 3D materials such as silicon...

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