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    Black phosphorus tunnel field-effect transistor as an alternative ultra-low power switch?

    February 25, 2020, Categories  Physics, Technology/Electronics

    Figure. A: Optical image and band diagram of the heterojunction formed by the thickness variation of black phosphorus 2D material. B: Schematic of the tunnel field-effect transistor and the thickness-dependent bandgap. C: Characteristic transfer curve showing steep subthreshold swing and high on-current.
    Optical image and band diagram of the heterojunction formed by the thickness variation of black phosphorus 2D material. B: Schematic of the tunnel field-effect transistor and the thickness-dependent bandgap. C: Characteristic transfer curve showing steep subthreshold swing and high on-current.

    Researchers have reported a black phosphorus transistor that can be used as an alternative ultra-low power switch. A research team led by Professor Sungjae Cho in the KAIST Department of Physics developed a thickness-controlled black phosphorus tunnel field-effect transistor (TFET) that shows 10-times lower switching power consumption as well as 10,000-times lower standby power consumption than conventional complementary metal-oxide-semiconductor (CMOS) transistors.

    The research team said t...

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