Category Technology/Electronics

Researchers realize Gallium Nitride-based Complementary Logic Integrated Circuits

Researchers realize Gallium nitride (GaN)-based complementary logic integrated circuits
(a) Schematic view of the device structure of the GaN complementary logic inverter developed at HKUST; (b) corresponding circuit diagram; (c) perspective view of a true-color photo of the 15-stage GaN complementary ring oscillator fabricated in HKUST. (d) Cross-coupled plot of voltage transfer curves at different temperatures, and (e) static power dissipation with respect to different supply voltage and input voltage of the reported inverter. The inverter is very stable up to 200 °C with substantially large noise margins. (f) Oscillating waveform and the corresponding power spectrum of the reported ring oscillator. Credit: Zheng et al. (Springer Nature).

Most integrated circuits (ICs) and electronic components developed to date are based on silicon metal-oxide-semiconductor (CMOS) tec...

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Quantum Emitters: Beyond Crystal Clear to Single-Photon Pure

Nanoscale luminescence quenching occurs when a focused ion beam is irradiated. By selectively quenching the uncorrelated light, one can increase the single-photon purity from the quantum emitter without optical degradation and structural destruction

A research team has developed a technique that can isolate the desired quality emitter by reducing the noise surrounding the target with what they have dubbed a ‘nanoscale focus pinspot.’

Photons – fundamental particles of light – are carrying these words to your eyes via the light from your computer screen or phone. Photons play a key role in the next-generation quantum information technology, such as quantum computing and communications...

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New Molecular Device has unprecedented Reconfigurability reminiscent of Brain-Plasticity

Decision trees within a molecular memristor | Nature
Fig. 1: Circuit element structure and I(V) characteristics

Device can be reconfigured multiple times simply by changing applied voltage. In a discovery published in the journal Nature, an international team of researchers has described a novel molecular device with exceptional computing prowess.

Reminiscent of the plasticity of connections in the human brain, the device can be reconfigured on the fly for different computational tasks by simply changing applied voltages. Furthermore, like nerve cells can store memories, the same device can also retain information for future retrieval and processing.

“The brain has the remarkable ability to change its wiring around by making and breaking connections between nerve cells...

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Ferroelectrics everywhere? New family of ferroelectric materials Raises Possibilities for Improved Information and Energy Storage

Three images showing production of ferroelectric magnesium-substituted zinc oxide thin films
Part of the process of creating ferroelectric magnesium-substituted zinc oxide thin films include: (left) Image showing thin film being sputter-deposited from metal sources; (center) ferroelectric hysteresis loops of thin-film capacitors showing two remanent polarization states at zero field; (right) atomic force microscope image showing a smooth surface at the nanometer scale and a very fine-grained and fiber-textured microstructure.
 IMAGE: PENN STATE MATERIALS RESEARCH INSTITUTE

A new family of materials that could result in improved digital information storage and uses less energy may be possible thanks to a team of Penn State researchers who demonstrated ferroelectricity in magnesium-substituted zinc oxide.

Ferroelectric materials are spontaneous electricly polarized bcause nega...

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