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    Category Technology/Electronics

    Bending an Organic Semiconductor can Boost Electrical Flow

    December 5, 2019, Categories  Physics, Technology/Electronics

    Organic transistors based on single crystals of rubrene, a hydrocarbon, can roughly double the speed of electricity flowing through them when a crystal is slightly bent (strained). This useful behavior cannot be easily achieved with traditional semiconductors made, for example, of silicon. Molecules of rubrene are arranged in a herringbone pattern (upper left), forming highly ordered semiconducting molecular crystals that can be used to create rigid (upper right) or flexible (lower left) high-performance organic transistors, based on thick or ultra-thin single crystals, respectively. An example of a freestanding rubrene transistor is shown on a finger tip (lower right).
    Image: Vitaly Podzorov/Rutgers University-New Brunswick

    Slightly bending semiconductors made of organic materials ca...

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    Potential solution to Overheating Mobile Phones

    December 4, 2019, Categories  Physics, Technology/Electronics

    Future magnon torque based devices such as this could allow for faster electronic gadgets that require less power and do not overheat

    Researchers have developed a revolutionary way to encode computational information without using electrical current. As a global first, this could lead to faster technological devices that could efficiently use energy without overheating.

    Modern computer memory encodes information by switching magnetic bits within devices. Now, a ground-breaking study conducted by researchers from the Department of Electrical and Computer Engineering at the National University of Singapore has found a new efficient way of using ‘spin waves’ to switch magnetisation at room temperature for more energy-efficient spin memory and logic devices.

    Traditional electronic chips s...

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    More efficient Quantum Dots without Heavy Metals

    December 2, 2019, Categories  Physics, Technology/Electronics

    a, Preparation of InP cores and InP/ZnSe/ZnS QDs with different morphology and shell thickness. The amounts of Se precursor for QD-1, QD-2 and QD-3 were 0.6 mmol, 1.2 mmol and 2.0 mmol, respectively, per 10 ml of solvent. The estimated size, based on inductively coupled plasma-atomic emission spectroscopy (ICP-AES) data, was projected on the STEM image of each QD. b, Ultraviolet–visible absorption spectra of the aliquots, taken during the InP core synthesis. a.u., arbitrary units. c, Photoluminescence spectra of QD-1′ (prepared without HF addition), QD-1, QD-2, QD-3, QD-1R, QD-2R and QD-3R. Inset, photograph of QD-1′ (no HF) and QD-3 taken under 365 nm illumination. d–i, STEM images of QD-1, QD-1R, QD-2, QD-2R, QD-3 and QD-3R (scale bar, 20 nm)...
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    First-of-a-kind Electro-Optical Device provides solution to faster and more energy efficient Computing Memories and processors

    December 2, 2019, Categories  Physics, Technology/Electronics

    The team has created a first-of-a-kind electro-optical device that bridges the fields of optical and electronic computing.

    The first ever integrated nanoscale device which can be programmed with either photons or electrons has been developed by scientists in Harish Bhaskaran’s Advanced Nanoscale Engineering research group at the University of Oxford.

    In collaboration with researchers at the universities of Münster and Exeter, scientists have created a first-of-a-kind electro-optical device which bridges the fields of optical and electronic computing. This provides an elegant solution to achieving faster and more energy efficient memories and processors.

    Computing at the speed of light has been an enticing but elusive prospect, but with this development it’s now in tangible pro...

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