Electroluminescence images of PiN diodes made from silicon carbide after being subjected to electrical stress. In the first diode (a), on which proton implantation was not applied, expanded stacking faults show up as dark regions. The other three diodes (b, c, and d) undergo proton implantation at increasing hydrogen ion doses. Contrary to the first diode, these exhibit no stacking fault expansion and, in turn, bipolar degradation.
Image credit: Masashi Kato from Nagoya Institute of Technology
Silicon carbide (SiC) is a promising semiconductor material for power electronic devices, but it suffers from bipolar degradation, which severely limits its lifespan...
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