AlN nucleation layers on SiC substrate tagged posts

Transmorphic epitaxial growth of AlN nucleation layers on SiC substrates for high-breakdown thin GaN transistors. A new method to fit together layers of semiconductors as thin as a few nanometres has resulted in not only a scientific discovery but also a new type of transistor for high-power electronic devices. The result, published in Applied Physics Letters, has aroused huge interest.

The achievement is the result of a close collaboration between scientists at Linköping University and SweGaN, a spin-off company from materials science research at LiU...