CMOS tagged posts

Next-generation AI hardware: 3D photonic-electronic platform boosts efficiency and bandwidth

New study showcases 3D photonics with record performance for AI
3D photonic chip module. Credit: Keren Bergman

Artificial intelligence (AI) systems promise transformative advancements, yet their growth has been limited by energy inefficiencies and bottlenecks in data transfer. Researchers at Columbia Engineering have unveiled a groundbreaking solution: a 3D photonic-electronic platform that achieves unprecedented energy efficiency and bandwidth density, paving the way for next-generation AI hardware.

The study, “3D Photonics for Ultra-Low Energy, High Bandwidth-Density Chip Data Links,” led by Keren Bergman, Charles Batchelor Professor of Electrical Engineering, is published in Nature Photonics.

The research details a pioneering method that integrates photonics with advanced complementary-metal- oxide-semiconductor (CMOS) electronics to redef...

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Wirelessly Powered Relay will help bring 5G Technology to Smart Factories

Figure 2 Prototype of the proposed relay transceiver The prototype of the proposed relay transceiver was fabricated with Si CMOS 65nm chips and 4×2 patch phased-array antenna board.
Prototype of the proposed relay transceiver
The prototype of the proposed relay transceiver was fabricated with Si CMOS 65nm chips and 4×2 patch phased-array antenna board.

The proposed innovative design leads to unprecedented power conversion efficiency and improved versatility. A recently developed wirelessly powered 5G relay could accelerate the development of smart factories, report scientists from Tokyo Tech. By adopting a lower operating frequency for wireless power transfer, the proposed relay design solves many of the current limitations, including range and efficiency. In turn, this allows for a more versatile and widespread arrangement of sensors and transceivers in industrial settings.

One of the hallmarks of the Information Age is the transformation of industries towards...

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World’s first N-Channel Diamond Field-Effect Transistor for CMOS Integrated Circuits

World's first N-channel diamond field-effect transistor for CMOS integrated circuits

A National Institute for Materials Science (NIMS) research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh environment applications, as well as the development of diamond power electronics. The research is published in Advanced Science.

Semiconductor diamond has outstanding physical properties such as ultra wide-bandgap energy of 5...

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The Metalens meets the Stars – Large, All-glass Metalens Images Sun, Moon and Nebulae

image of the metalens and camera
This 10-centimeter-diameter glass metalens can image the sun, the moon and distant nebulae with high resolution. (Credit: Capasso Lab/Harvard SEAS)
 

Metalenses have been used to image microscopic features of tissue and resolve details smaller than a wavelength of light. Now they are going bigger.

Researchers at the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) have developed a 10-centimeter-diameter glass metalens that can image the sun, the moon and distant nebulae with high resolution.

It is the first all-glass, large-scale metalens in the visible wavelength that can be mass produced using conventional CMOS fabrication technology.

The research is published in ACS Nano.

“The ability to accurately control the size of tens of billions of nanopill...

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