CMOS tagged posts

King Abdullah University of Science and Technology (KAUST; Saudi Arabia) researchers have set a record in microchip design, achieving the first six-stack hybrid CMOS (complementary metal-oxide semiconductor) for large-area electronics. With no other reported hybrid CMOS exceeding two stacks, the feat marks a new benchmark in integration density and efficiency, opening possibilities in electronic miniaturization and performance.

A paper detailing the team’s research appears in Nature Electronics.

Among microchip technologies, CMOS microchips are found in nearly all electronics, from phones and televisions to satellites and medical devices. Compared with conventional silicon chips, hybrid CMOS microchips hold greater promise for large-area electronics...

Artificial intelligence (AI) systems promise transformative advancements, yet their growth has been limited by energy inefficiencies and bottlenecks in data transfer. Researchers at Columbia Engineering have unveiled a groundbreaking solution: a 3D photonic-electronic platform that achieves unprecedented energy efficiency and bandwidth density, paving the way for next-generation AI hardware.

The study, “3D Photonics for Ultra-Low Energy, High Bandwidth-Density Chip Data Links,” led by Keren Bergman, Charles Batchelor Professor of Electrical Engineering, is published in Nature Photonics.

The research details a pioneering method that integrates photonics with advanced complementary-metal- oxide-semiconductor (CMOS) electronics to redef...

The proposed innovative design leads to unprecedented power conversion efficiency and improved versatility. A recently developed wirelessly powered 5G relay could accelerate the development of smart factories, report scientists from Tokyo Tech. By adopting a lower operating frequency for wireless power transfer, the proposed relay design solves many of the current limitations, including range and efficiency. In turn, this allows for a more versatile and widespread arrangement of sensors and transceivers in industrial settings.

One of the hallmarks of the Information Age is the transformation of industries towards...

A National Institute for Materials Science (NIMS) research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh environment applications, as well as the development of diamond power electronics. The research is published in Advanced Science.

Semiconductor diamond has outstanding physical properties such as ultra wide-bandgap energy of 5...