CMOS tagged posts

A National Institute for Materials Science (NIMS) research team has developed the world’s first n-channel diamond MOSFET (metal-oxide-semiconductor field-effect transistor). The developed n-channel diamond MOSFET provides a key step toward CMOS (complementary metal-oxide-semiconductor: one of the most popular technologies in the computer chip) integrated circuits for harsh environment applications, as well as the development of diamond power electronics. The research is published in Advanced Science.

Semiconductor diamond has outstanding physical properties such as ultra wide-bandgap energy of 5...

Metalenses have been used to image microscopic features of tissue and resolve details smaller than a wavelength of light. Now they are going bigger.

Researchers at the Harvard John A. Paulson School of Engineering and Applied Sciences (SEAS) have developed a 10-centimeter-diameter glass metalens that can image the sun, the moon and distant nebulae with high resolution.

It is the first all-glass, large-scale metalens in the visible wavelength that can be mass produced using conventional CMOS fabrication technology.

The research is published in ACS Nano.

“The ability to accurately control the size of tens of billions of nanopill...

Kerry Vahala and collaborators from UC Santa Barbara have found a unique solution to an optics problem. When we last checked in with Caltech’s Kerry Vahala three years ago, his lab had recently reported the development of a new optical device called a turnkey frequency microcomb that has applications in digital communications, precision time keeping, spectroscopy, and even astronomy.

This device, fabricated on a silicon wafer, takes input laser light of one frequency and converts it into an evenly spaced set of many distinct frequencies that form a train of pulses whose length can be as short as 100 femtoseconds (quadrillionths of a second). (The comb in the name comes from the frequencies being spaced like the teeth of a hair comb.)

Now Vahala (BS ’80, MS ’81,...

Prof. Becky Peterson at the University of Michigan leads a team that has developed a scalable, manufacturable method for developing thin film transistors (TFTs) that operate at the lowest possible voltage. This is particularly important for TFT integration with today’s silicon complementary metal-oxide semiconductors (CMOS), which are used in the vast majority of integrated circuits.

“We’re essentially developing a less complicated device that operates at lower voltage,” said ECE Ph.D. student Tonglin (Tanya) Newsom, who is first author on the paper...