infrared LED and infrared detector tagged posts

Discovery of Non-toxic Semiconductors with a Direct Bandgap in the Near infrared

"Figure. Crystal structure of the inverse perovskite Ca3SiO semiconductor" Image
Crystal structure of the inverse perovskite Ca3SiO semiconductor

New compound may replace toxic mercury cadmium telluride and gallium arsenide in near-infrared devices. NIMS and the Tokyo Institute of Technology have jointly discovered that the chemical compound Ca3SiO is a direct transition semiconductor, making it a potentially promising infrared LED and infrared detector component. This compound — composed of calcium, silicon and oxygen — is cheap to produce and non-toxic. Many of the existing infrared semiconductors contain toxic chemical elements, such as cadmium and tellurium. Ca3SiO may be used to develop less expensive and safer near-infrared semiconductors.

Infrared wavelengths have been used for many purposes, including optical fiber communications, photovoltaic power gene...

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