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    Nonequilibrium Green's functions (NEGF) tagged posts

    Novel Memory Technology based on Compound Semiconductors

    January 10, 2022, Categories  Physics, Technology/Electronics

    ULTRARAM device concept. a) Schematic cross-section of a device with corresponding material layers. The floating gate (FG), triple-barrier resonant-tunneling structure (TBRT), and readout channel are highlighted. Arrows indicate the direction of electron flow during program/erase operations. b) Scanning electron micrograph of a fabricated device of 10 µm gate length. c,d) Nonequilibrium Green’s functions (NEGF) calculations of density of states alongside conduction band diagrams for no applied bias (i.e., retention) and program-cycle bias respectively. B1, B2, and B3 are the AlSb barrier layers. QW1 and QW2 are the InAs quantum wells in the TBRT. Credit: DOI: 10.1002/aelm.202101103

    A pioneering type of patented computer memory known as ULTRARAM has been demonstrated on silicon wafers ...

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