(top) Devices with one-layer and seven-layer MoS2 were built on top of a silicon base and compared. Dielectric constants responsible for the difference in electrostatic potentials are shown in parenthesis. (bottom) The device with one-layer MoS2 (inside the violet box) showed better performance in converting light to electric current than the seven-layer device (inside the pink box).
The Center for Integrated Nanostructure Physics, within the Institute for Basic Science (IBS) has developed the world’s thinnest photodetector, that is a device that converts light into an electric current. With a thickness of just 1.3nm – 10X smaller than the current standard silicon diodes – this device could be used in the Internet of Things IoT, smart devices, wearable electronics and photoelectronics.
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