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    Are Diamonds GaN’s Best Friend? Revolutionizing Transistor Technology

    January 2, 2024, Categories  Physics, Technology/Electronics

    The integration of a 3C-SiC layer between GaN and diamond significantly reduces thermal resistance at the interface and improves heat dissipation, allowing for better performance.
    Credit: Jianbo Liang, Osaka Metropolitan University 

    A research team at Osaka Metropolitan University has fabricated a gallium nitride (GaN) transistor using diamond, which of all natural materials has the highest thermal conductivity on earth, as a substrate, and they succeeded in increasing heat dissipation by more than 2X compared with conventional transistors. The transistor is expected to be useful not only in the fields of 5G communication base stations, weather radar, and satellite communications, but also in microwave heating and plasma processing.

    Researchers at Osaka Metropolitan University are p...

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